| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology which can suppress the amount of liquid material for forming an insulating film to the minimum limit. SOLUTION: After a plurality of semiconductor films 310A, 310B are formed on a substrate 110, the liquid material for forming a gate insulating film is locally arranged on a region superposed with the respective semiconductor films 310A, 310B by using a liquid droplet discharging method. The arranged liquid material is dried, for example, at a temperature of about 100 to 200°C, and further sintered at the temperature of 350 to 400°C for about 60 min. Thereby, the gate insulating films 320A, 320B formed locally on a region superposed with the respective semiconductor films 310A, 310B are obtained. COPYRIGHT: (C)2006,JPO&NCIPI
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