| 摘要 |
PROBLEM TO BE SOLVED: To prevent the generation of residuals caused by the insufficient etching of a floating gate material caused by a difference in height on the principal plane of a semiconductor substrate. SOLUTION: On a semiconductor device including an assist gate and a cap insulation film stacked on the principal plane of the semiconductor substrate, the cap insulation film is formed in a length shorter than the gate length of the assist gate, and a floating gate is formed from the principal plane of the semiconductor substrate toward side faces of the assist gate and the cap insulation film. In addition, its manufacturing method includes a step of forming the cap insulation film in a length shorter than the gate length of the assist gate and a step of forming the floating gate from the principal plane of the semiconductor substrate toward the side faces of the assist gate and the cap insulation film. COPYRIGHT: (C)2006,JPO&NCIPI
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