Test semiconductor device and method for determining Joule heating effects in such a device

摘要

Method and test structures for determining heating effects in a test semiconductor device ( 10 ) are provided. The test device may include a first conductive metal structure ( 15 ₁- 15 ₆) for accepting a flow of electric current that causes a heating effect. The test device may further include a second conductive metal structure proximate ( 12 ₁- 12 ₆) the first conductive structure for obtaining resistivity changes in response to the heating effect. The resistivity changes are indicative of temperature changes due to the heating effect.