发明名称 METHOD AND SYSTEM FOR XENON FLUORIDE ETCHING WITH ENHANCED EFFICIENCY.
摘要 Provided herein is an apparatus and a method useful for manufacturing MEMS devices. An aspect of the disclosed apparatus provides a substrate comprising an etchable material exposed to a solid-state etchant, wherein the substrate and the solid-state etchant are disposed in an etching chamber. In some embodiments, the solid state etchant is moved into close proximity to the substrate. In other embodiments, a configurable partition is between the substrate and the solid-state etchant is opened. The solid-state etchant forms a gas-phase etchant suitable for etching the etchable material. In some preferred embodiments, the solid-state etchant is solid xenon difluoride. The apparatus and method are advantageously used in performing a release etch in the fabrication of optical modulators.
申请公布号 MXPA05010234(A) 申请公布日期 2006.03.29
申请号 MX2005PA10234 申请日期 2005.09.23
申请人 IDC, LLC. 发明人 WILLIAM J. CUMMINGS
分类号 G03F7/085;B81C99/00;(IPC1-7):G03F7/085 主分类号 G03F7/085
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