| 摘要 |
A magnetic storage device (10) includes a magnetic yoke (18). A maximum thickness of each open end (14, 16) of the magnetic yoke (18) in a diameter direction (Y) of the magnetic yoke is set to be larger than a maximum thickness (T2) of a second magnetic layer (28) of a magnetoresistive element (20) in the diameter direction (Y) of the magnetic yoke (18), thereby materializing the shape of the magnetic yoke (18). Moreover, a magnetic field generated from the magnetic yoke (18) can be increased by optimization of the shape of the magnetic yoke (18), thereby reducing writing current.
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