| 摘要 |
In the piezoelectric resonator the piezoelectric material 3, primarily ZnO, has a wurtzite structure compound crystal. The crystal is epitaxially grown in such a way that it is upright on a sapphire substrate 2. The (1,1,-2,0) crystal face becomes parallel to a surface of the R-plane sapphire substrate having a (0,1,-1,2) crystal face parallel to the substrate surface, and a pair of excitation electrodes 4, 5 are disposed on a pair of principal surfaces opposite to each other in the thickness direction of the piezoelectric material in such a way that the pair of excitation electrodes sandwich the C plane which is a (0,0,0,1) crystal face perpendicular to the (1,1,-2,0) crystal face of the tabular piezoelectric material. The substrate 2 may carry several resonators (fig 4). The piezoelectric resonator is suitable for use in a high frequency band. Variation in the piezoelectric material is reduced, variation in performance is reduced, and production can be performed without the need for a polarization treatment step. |
