发明名称 |
Method and system for xenon fluoride etching with enhanced efficiency |
摘要 |
Provided herein is an apparatus and a method useful for manufacturing MEMS devices. An aspect of the disclosed apparatus provides a substrate comprising an etchable material exposed to a solid-state etchant, wherein the substrate and the solid-state etchant are disposed in an etching chamber. In some embodiments, the solid state etchant is moved into close proximity to the substrate. In other embodiments, a configurable partition is between the substrate and the solid-state etchant is opened. The solid-state etchant forms a gas-phase etchant suitable for etching the etchable material. In some preferred embodiments, the solid-state etchant is solid xenon difluoride. The apparatus and method are advantageously used in performing a release etch in the fabrication of optical modulators.
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申请公布号 |
EP1641026(A2) |
申请公布日期 |
2006.03.29 |
申请号 |
EP20050255704 |
申请日期 |
2005.09.14 |
申请人 |
IDC, LLC |
发明人 |
CUMMINGS, WILLIAM J.;FLOYD, PHILIP D. |
分类号 |
H01L21/00;B81C1/00;B81C99/00;G02B26/08 |
主分类号 |
H01L21/00 |
代理机构 |
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