发明名称 Method and system for xenon fluoride etching with enhanced efficiency
摘要 Provided herein is an apparatus and a method useful for manufacturing MEMS devices. An aspect of the disclosed apparatus provides a substrate comprising an etchable material exposed to a solid-state etchant, wherein the substrate and the solid-state etchant are disposed in an etching chamber. In some embodiments, the solid state etchant is moved into close proximity to the substrate. In other embodiments, a configurable partition is between the substrate and the solid-state etchant is opened. The solid-state etchant forms a gas-phase etchant suitable for etching the etchable material. In some preferred embodiments, the solid-state etchant is solid xenon difluoride. The apparatus and method are advantageously used in performing a release etch in the fabrication of optical modulators.
申请公布号 EP1641026(A2) 申请公布日期 2006.03.29
申请号 EP20050255704 申请日期 2005.09.14
申请人 IDC, LLC 发明人 CUMMINGS, WILLIAM J.;FLOYD, PHILIP D.
分类号 H01L21/00;B81C1/00;B81C99/00;G02B26/08 主分类号 H01L21/00
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