PIEZOELECTRIC MATERIAL WORKING METHOD

摘要

A mask (14) having a predetermined film thickness distribution is arranged on a piezoelectric material substrate (11), which is subjected to dry etching by using a working speed difference between the piezoelectric material substrate (11) and the mask (14), thereby obtaining a target 3-dimensional shape. The thickness distribution of the mask (14) is adjusted by pressurized fixation using a reflow, a precision mold (15). It is also possible to work the piezoelectric material substrate (11) into a 3-dimensional shape having an amplified film thickness distribution by adjusting the gas composition used for the dry etching. Thus, it is possible to work piezoelectric material into a predetermined 3-dimensional shape without introducing defects and obtain a highly accurate piezoelectric element of high quality.