| 摘要 |
The invention provides a semiconductor device and a method for manufacturing the same that are capable of improving the product performance and operational efficiency of a cross-point FeRAM, as well as increasing the area of capacitors included in the cross-point FeRAM. An upper electrode supporting layer forming mask for forming an upper electrode supporting layer can be made of a hard mask material. By making use of the upper electrode supporting layer forming mask remaining unremoved in forming and processing a lower electrode layer, prior to forming an upper electrode layer, a region where a ferroelectric capacitor is formed can be made larger than an area occupied by an intersection of the upper electrode layer and the lower electrode layer.
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