| 摘要 |
A semiconductor device comprises a semiconductor substrate, a semiconductor layer formed above the semiconductor substrate, a plurality of unit cells each having a structure with a gate electrode disposed and formed above the semiconductor layer to have a stripe-like shape and with a source layer and a drain layer formed in the semiconductor layer to have stripe-like shapes respectively, a gate wiring line for mutually connecting together respective gate electrodes of the unit cells, a first main electrode being formed on a dielectric film covering the gate electrodes and the gate wiring line and being in contact with any one of the source layer and the drain layer of each unit cell, an impurity diffusion layer formed in the semiconductor layer to a depth reaching the semiconductor substrate only at part immediately underlying the gate wiring line, the part being selected from part immediately underlying a remaining one of the source layer and the drain layer of each unit cell and part immediately underlying the gate wiring line, the impurity diffusion layer being for permitting extension of the remaining one of the source and drain layers of each unit cell up to the semiconductor substrate, and a second main electrode as formed at a back surface of the semiconductor substrate.
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