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发明名称
Structure and method of forming integrated circuits utilizing strained channel transistors
摘要
申请公布号
SG120169(A1)
申请公布日期
2006.03.28
申请号
SG20040003815
申请日期
2004.06.17
申请人
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
发明人
CHUN-CHIEH LIN;WEN-CHIN LEE;YEE-CHIA YEO;CHENMING HU
分类号
H01L21/00;H01L21/336;H01L21/8234;H01L27/04;H01L27/088;H01L27/092;H01L29/78
主分类号
H01L21/00
代理机构
代理人
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