发明名称 Inspection device and inspection method of dielectric film, and method of manufacturing semiconductor device
摘要 After placing a sample in a heating vacuum chamber, a probe is climbed down to a position above a capacitor formed in the sample whose electrical characteristic is supposed to be measured. The probe is contacted with both electrodes of the capacitor, which is confirmed by electrical measurement. In order to measure capacitance loss, after filling N<SUB>2 </SUB>gas up in the heating vacuum chamber, a mixed gas is introduced from a line for 3 vol % H<SUB>2</SUB>+97 vol % N<SUB>2 </SUB>to the inside of the heating vacuum chamber. After pressure has been stabilized there, capacitance loss and lapsed time are measured at the same time. Concentrations of residual H<SUB>2</SUB>O and residual O<SUB>2 </SUB>in the heating vacuum chamber are measured by a quadrupole mass spectrometer QMS; and at the same time, concentrations of each of residual H<SUB>2</SUB>O and residual O<SUB>2 </SUB>in an exhaust gas are measured by sensors.
申请公布号 US7017430(B2) 申请公布日期 2006.03.28
申请号 US20030437892 申请日期 2003.05.15
申请人 FUJITSU LIMITED 发明人 CROSS JEFFREY S.;TSUKADA MINEHARU
分类号 H01L21/66;G01M99/00;G01N27/22;G11C29/50;H01L21/8246;H01L27/105;H01L27/115 主分类号 H01L21/66
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