SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method, capable of increasing both on currents of a p-type MOS transistor and an n-type MOS transistor, and of preventing the occurrence of bad contact. SOLUTION: There are formed the p-type MOS transistor 14 formed in the first region 13p of a silicon substrate 11 and the n-type MOS transistor 15 formed in a second region 13n. In the second region 13n, there are formed a second stress control film 38 covering the silicon substrate 11, the surface of a part of a device isolation region 12, and a gate laminate 34 and having tensile stress; and a first stress control film 26 covering the silicon substrate 11 in the first region 13p, the surface of the part of the device isolation region 12, and a gate laminate 23, and further covering the second stress control film 38 in the second region and having compression stress. Assuming the film thickness of the first stress control film 26 to be t1, the magnitude of the compression stress P1, the film thickness of the second stress control film 38 t2, and the magnitude of the compression stress P2, a relation t1×P1