发明名称 |
NONVOLATILE MEMORY AND MANUFACTURING METHOD AND OPERATING METHOD THEREOF |
摘要 |
A nonvolatile memory is provided. The memory includes a select transistor and a trench transistor. The select transistor is formed on the substrate. The select transistor includes a first gate formed on the substrate and first and second source/drain regions formed in the substrate next to the first gate. The trench transistor is formed in the substrate. The trench transistor includes a second gate formed in the trench of substrate, an electron trapping layer formed between the second gate and the trench and second and third source/drain regions formed in the substrate next to the second gate. The select transistor and the trench transistor share the second source/drain region.
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申请公布号 |
US2006060910(A1) |
申请公布日期 |
2006.03.23 |
申请号 |
US20050160175 |
申请日期 |
2005.06.13 |
申请人 |
YANG CHING-SUNG;WONG WEI-ZHE;CHO CHIH-CHEN |
发明人 |
YANG CHING-SUNG;WONG WEI-ZHE;CHO CHIH-CHEN |
分类号 |
H01L29/788;H01L21/336 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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