发明名称 |
Memory component with memory cells having changeable resistance and fabrication method therefor |
摘要 |
The invention relates to a memory component having memory cells based on an active solid electrolyte material which can be changed in terms of its resistance value. The active solid electrolyte material is embedded between a bottom and top electrode, can be switched between an on state with a low resistance and an off state with a high resistance by comparison therewith by application of a suitable electric field between said electrodes. A resistance material is embedded in parallel with the solid electrolyte material between the electrodes.
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申请公布号 |
US2006060832(A1) |
申请公布日期 |
2006.03.23 |
申请号 |
US20050214692 |
申请日期 |
2005.08.29 |
申请人 |
SYMANCZYK RALF;ROEHR THOMAS |
发明人 |
SYMANCZYK RALF;ROEHR THOMAS |
分类号 |
H01L47/00 |
主分类号 |
H01L47/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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