| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem that leak current is generated in a source-drain region in a conventional MIS type semiconductor device having a side wall spacer of two-layered structure, the source-drain region of LDD structure and a salicide structure. SOLUTION: The MIS type semiconductor device is provided with a gate electrode having the side wall structure equipped with the first side wall spacer and the second side wall spacer, the source-drain region having the LDD structure equipped with a first diffusion region and a second diffusion region, and the salicide structure. In this case, the MIS type semiconductor device is provided with an element region formed on the semiconductor substrate and a field oxide film provided so as to surround the periphery of the element region, while a third diffusion region connected to the first diffusion region or the second diffusion region is provided in a boundary region between the element region and the field oxide film. COPYRIGHT: (C)2006,JPO&NCIPI
|
