| 摘要 |
A high voltage rectifier device exhibiting low forward resistance and fast switching time formed of a high voltage structure connected in a cascode configuration with a low voltage structure. The high voltage structure is a bidirectional normally on semiconductor switch have two pairs of gate and source terminals which shuts off if either of the gate terminals is reverse biased. The low voltage structure is a diode, preferably a Schottky or barrier diode. The device is advantageously formed as an integrated circuit. With one of the terminal pairs of the switch clamped to zero volts, the device behaves as a diode, or the second terminal pair can be employed to provide the functions of a three terminal controlled rectifier. Among other possible applications are integrated circuits using four of the devices as a bridge rectifier, and as an anti-parallel diode for connection with an IGBT.
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