EPITAXIAL CRYSTAL GROWING METHOD

摘要

An epitaxial crystal growing method wherein doping conditions can be easily set at the time of growing an epitaxial crystal having a desired carrier concentration. In a method for growing an epitaxial crystal layer on a compound semiconductor substrate by adding a dopant, a relationship between an off angle and a doping efficiency is previously obtained by a compound semiconductor substrate of the same type, and the doping conditions for epitaxially growing the crystal layer on the compound semiconductor substrate are set based on the obtained relationship and the off angle value of the substrate.