| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device wherein side etching is suppressed and patterning accuracy is increased. SOLUTION: First, a ZnO layer 3 is formed on a glass substrate 2, and a plurality of square masks 5 are formed in an area for removing the ZnO layer 3 so that they may have a width smaller than that disappearing due to side etching that is resulted from etching of the ZnO layer 3. A mask 4 having a larger pattern than the width disappearing due to side etching is formed in an area wherein the ZnO layer 3 is still left. The thin and long masks 5 and the mask 4 having the pattern are used as an etching mask, and anisotropic etching of which etching speed in a widthwise direction is higher than that in a thickness direction is adopted to form a specified pattern in the ZnO layer 3 to be left, and then the ZnO layer 3 to be removed is removed and the square masks 5 are peeled. COPYRIGHT: (C)2006,JPO&NCIPI
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