| 摘要 |
A memory cell arrangement has a plurality of memory cells of the CBRAM type and a programming apparatus, the memory cells being arranged along bit lines and each bit line having a programming apparatus. The invention provides for the programming apparatus to comprise a charge storage device and a switchable charging apparatus. The inventive method for programming memory cells of the CBRAM type is carried out in such a manner that, a given quantity of an electrical charge is stored in a charge storage device, and the stored quantity of electrical charge is transferred to the memory cell to be programmed.
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