发明名称 |
Nitride semiconductor light emitting device having electrostatic discharge(ESD) protection capacity |
摘要 |
A nitride semiconductor light emitting device including a light emitting diode and a diode formed on a single substrate, in which the light emitting diode and the diode use a common electrode. According to the present invention, an active layer and a p-type nitride semiconductor layer are each divided into a first region and a second region by an insulative isolation layer, and an ohmic contact layer is formed on the p-type nitride semiconductor layer contained in the first region. A p-type electrode is formed on the ohmic contact layer and is extended to the p-type nitride semiconductor layer contained in the second region. An n-type electrode is formed on the p-type nitride semiconductor layer contained in the second region, passes through the p-type nitride semiconductor layer and the active layer contained in the second region, and is connected to the first n-type nitride semiconductor layer.
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申请公布号 |
US2006060880(A1) |
申请公布日期 |
2006.03.23 |
申请号 |
US20050053906 |
申请日期 |
2005.02.10 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
LEE KYU H.;KIM HYUN K.;KIM JE W.;KIM DONG J. |
分类号 |
H01L29/22;H01L33/32;H01L33/40;H01L33/62 |
主分类号 |
H01L29/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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