| 摘要 |
PROBLEM TO BE SOLVED: To etch selectively and easily the material film of a high dielectric constant in a manufacturing method of a semiconductor device. SOLUTION: The manufacturing method of a semiconductor device has a process for forming on a silicon substrate 104 insulating films 106, 111 including at least the material film 106 of a high dielectric constant, a process for forming a gate-electrode layer 109 on the insulating films 106, 111, a process for so patterning the gate-electrode layer 109 as to form a gate electrode 109, and a process for removing by a strong-acid aqueous solution containing a fluorine compound the material film 106 of a high dielectric constant wherefrom the film 106 of the gate electrode 109 is excluded. COPYRIGHT: (C)2006,JPO&NCIPI
|
