发明名称 Internal voltage trimming circuit for use in semiconductor memory device and method thereof
摘要 An internal power voltage trimming circuit and its method individually or simultaneously perform level trimming for a plurality of power voltages in a semiconductor memory device. The internal power voltage trimming circuit includes a trimming control signal generator for generating a trimming selection signal and a trimming enable signal by using an inputted address signal, and an internal power voltage level controller for controlling the levels of the internal power voltages by using the trimming selection signal that is outputted under control of the trimming enable signal.
申请公布号 US2006061404(A1) 申请公布日期 2006.03.23
申请号 US20040015474 申请日期 2004.12.20
申请人 AN YONG-BOK 发明人 AN YONG-BOK
分类号 G06G7/28 主分类号 G06G7/28
代理机构 代理人
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