| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of forming a conductive path comprising coupling of fine particles and organic semiconductor molecules in a simple manner and a short time. SOLUTION: The manufacturing method for a so-called bottom gate/bottom contact type field effect transistor includes a process in which, after a gate electrode 12 is formed on a base body 11, a gate insulating layer 13 is formed on the base body 11 and the gate electrode 12. Then after a source/drain electrode 14 is formed on the gate insulating layer 13, a channel formation region 15 consisting of a conductive path 23 is formed between the source/drain electrodes 14. The process for forming the channel formation region 15 includes a process in which a solution containing fine particles consisting of a conductor or semiconductor is mixed with organic semiconductor molecules, so that the fine particles couple (react) with the organic semiconductor molecules to provide a cluster 20, and then the cluster 20 is arranged at part of the gate insulating layer 13 between the source/drain electrodes 14. COPYRIGHT: (C)2006,JPO&NCIPI
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