| 摘要 |
PROBLEM TO BE SOLVED: To provide a horizontal-type bipolar junction transistor, having a performance similar to the performance of a high-speed vertical type bipolar junction transistor. SOLUTION: There is included a PSWS (polysilicon sidewall spacer) which forms a contact region 112, contacting with a base region 110 of a vertical type bipolar junction transistor 100. Accordingly, a processing step of aligning a contact mask in the relatively narrow base region 110 is eliminated. Self matching of a base/emitter region is made by this sidewall spacer, and the base resistance and the junction capacitance are reduced. Accordingly, the cut-off frequency f<SB>τ</SB>is improved, and the oscillation frequency f<SB>max</SB>can be made maximum. Furthermore, a BiCMOS (bipolar CMOS) technique can be executed on an insulating substrate, such as SOI, using this new topology. COPYRIGHT: (C)2006,JPO&NCIPI
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