| 摘要 |
A method of making a microelectronic device comprising: making a device B comprising providing a structure having a first bond pad, depositing a first electrically conductive material having a first reflow temperature over the first bond pad, and depositing a second electrically conductive material having a second reflow temperature over the first electrically conductive material, and wherein the second reflow temperature is less than the first reflow temperature, and heating the device to a temperature sufficient to reflow the second electrically conductive material but not the first electrically conductive material so that the second electrically conductive material encapsulates the first electrically conductive material to provide a first bump for making electrical connection to device B. |
