发明名称
摘要 <p>PROBLEM TO BE SOLVED: To provide a pattern correction device constituted so that the defect of a pattern formed on the substrate of a mask for exposure can be corrected. SOLUTION: A mask original disk for exposure is placed on an XY table 17 and the void defective part thereof is moved under a paste applying mechanism 14. Then, paste is attached to the needle of the applying mechanism 14, applied to the void defective part and dried by an IR light source 20. In the case of a black defect, the black defect is laser-cut by a laser irradiation mechanism 13 and a dent part caused after the laser-cut is executed is corrected by applying the transparent paste or the metallic paste to it by the applying mechanism 14.</p>
申请公布号 JP3758887(B2) 申请公布日期 2006.03.22
申请号 JP19990090539 申请日期 1999.03.31
申请人 发明人
分类号 H01L21/027;G03F1/72 主分类号 H01L21/027
代理机构 代理人
主权项
地址