发明名称 |
Data input circuit and method for synchronous semiconductor memory device |
摘要 |
A circuit for receiving data to be written in a synchronous semiconductor memory device, comprising: a first set of latches for receiving an n-bit data upon transition of an internal strobe signal; a counter for counting the number of transitions of the internal strobe signal and for outputting an indicating signal upon counting the end of a string of internal strobe signals; a second set of latches for receiving the outputs of the first set of latches, the second set of latches being clocked by the indicating signal; and a third set of latches for receiving the outputs of the second set of latches, the third set of latches being clocked by a clock signal derived from a system clock.
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申请公布号 |
US7016237(B2) |
申请公布日期 |
2006.03.21 |
申请号 |
US20040771488 |
申请日期 |
2004.02.02 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE JUNG-BAE;LA ONE-GYUN |
分类号 |
G11C7/00;G11C11/407;G11C7/10;G11C11/409 |
主分类号 |
G11C7/00 |
代理机构 |
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