SEED LAYER PROCESSES FOR MOCVD OF FERROELECTRIC THIN FILMS ON HIGH-K GATE OXIDES,申请号KR20020072327-传众专利搜索

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发明名称	SEED LAYER PROCESSES FOR MOCVD OF FERROELECTRIC THIN FILMS ON HIGH-K GATE OXIDES
摘要
申请公布号	KR100562731(B1)	申请公布日期	2006.03.20
申请号	KR20020072327	申请日期	2002.11.20
申请人		发明人
分类号	C23C16/18;C23C16/02;C23C16/40;C23C16/56;H01L21/02;H01L21/28;H01L21/316;H01L21/336;H01L21/8246;H01L21/8247;H01L27/105;H01L29/788;H01L29/792	主分类号	C23C16/18
代理机构		代理人
主权项
地址

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