SOLID STATE IMAGE PICKUP DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To reduce white spots by optimizing the impurity concentration in a p-type impurity introducing region of a well contact, size of a contact part, and forming position of an n-type region of a photoelectric conversion part. SOLUTION: The solid state image pickup device comprises a pixel region in which a plurality of pixels including a photoelectric converter 21 are arranged and a pixel well 12 which is common among pixels on a semiconductor substrate 11. A well contact 14 which supplies a reference voltage to the pixel well 12 comprises an electrode 15 that supplies the reference voltage, a p-type impurity introducing region 16 formed on the surface layer of the pixel well 12, and a contact 17 which is formed in the p-type impurity introducing region 16 for connection to the electrode 15 and has a concentration higher than the p-type impurity introducing region 16. The p-type impurity introducing region 16 has at least p-type impurities introduced in it, with its impurity concentration of 1×1019cm-3or less. COPYRIGHT: (C)2006,JPO&NCIPI