| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor crystal defect testing method, etc. which uses cathode luminescence (CL) that enables checking of the measurement position at a high spacial resolution, and a sample analysis at a high spacial resolution. SOLUTION: The semiconductor crystal defect testing method carries out the following processes in this order: a process of placing, on a stage 3, a substrate 2 containing a silicon layer on the front surface side; a process of cooling the substrate 2 to a temperature of 100-4 K; a process, wherein either the stage 3 or an electron beam for irradiating the substrate surface is moved two-dimensionally to irradiate the prescribed area of the substrate surface by the electron beam, with only a small portion of the region irradiated at a time and scanned over the prescribed region of the substrate surface to cover the entire region; a process of detecting near-infrared light, having a wavelength of 1,200-1,700 nm among the CL lights emitted from the substrate surface, and at the same time detecting secondary electrons generated from the substrate surface to check the detection position; and a process, wherein a secondary electron image which is an image of the substrate surface is displayed, based on the detected secondary electrons, and at the same time the intensity of the detected near-infrared light is displayed in correspondence with the secondary electron image to identify a portion of the substrate surface which has high intensity of near-infrared light. COPYRIGHT: (C)2006,JPO&NCIPI
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