| 摘要 |
An image sensor includes a substrate ( 41 ), an interlayer ( 42 ) on the substrate and a lens layer ( 40 ) on the interlayer. The substrate is a silicon layer. A plurality of photodiodes ( 411 ) are arranged in a matrix in an upper surface portion of the substrate. The interlayer includes an opaque metal layer ( 421 ) and a transparent color filter layer ( 422 ). The metal layer overlies portions of the upper surface of the substrate between the photodiodes. The color filter layer covers the metal layer and the photodiodes. The lens layer includes a plurality of multilevel binary optics elements ( 43 ). Each of the multilevel binary optics elements is located above a corresponding one of the photodiodes. By using the multilevel binary optics elements instead of conventional spherical microlenses, the optical capability of the image sensor is improved.
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