| 发明名称 |
METHOD AND DEVICE FOR DEPOSITING A DOPED MATERIAL BY EPITAXIAL GROWTH |
| 摘要 |
The method comprises the deposition of at least one layer of doped material on a heated substrate (6) placed into a housing (2) by subjecting the surface of the substrate (6) to the action of a molecular beam (130 of material (16), to the action of a beam of doping particles (25) and to the action of a beam of electrons (28). |
| 申请公布号 |
WO8605319(A1) |
申请公布日期 |
1986.09.12 |
| 申请号 |
WO1986FR00048 |
申请日期 |
1986.02.19 |
| 申请人 |
ARNAUD D'AVITAYA, FRANCOIS;CAMPIDELLI, YVES |
发明人 |
ARNAUD D'AVITAYA, FRANCOIS;CAMPIDELLI, YVES |
| 分类号 |
C30B23/02;H01L21/203;H01L21/26;(IPC1-7):H01L21/203 |
主分类号 |
C30B23/02 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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