| 摘要 |
PROBLEM TO BE SOLVED: To provide a process for fabricating a semiconductor device in which level difference between a ferroelectric capacitor and its periphery can be moderated easily without causing any significant process damage on the ferroelectric capacitor, and to provide a semiconductor device. SOLUTION: A first contact hole H1 is formed by etching a first interlayer insulating film 20, and a first plug electrode 21 is formed in the first contact hole H1. A multilayer insulating film consisting of a first insulating film 33, a first hydrogen barrier film 34, and a second insulating film 35 is formed on the first interlayer insulating film 20 on the periphery of the first plug electrode 21, and a second contact hole H2 is formed by etching the multilayer insulating film. Furthermore, a second plug electrode 22 is formed in the second contact hole H2, and a ferroelectric capacitor 40 is formed on the second plug electrode 22. Thereafter, a first layer interconnect line 51 is formed on the first interlayer insulating film 20 excepting beneath the ferroelectric capacitor 40 and followed by formation of a second interlayer insulating film 70. COPYRIGHT: (C)2006,JPO&NCIPI
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