| 摘要 |
A test pattern projected on a wafer (W) through a projection optical system (PL) is provided on a focus test pattern. The focus test pattern has line patterns (12a-12f) arranged side by side in the measurement direction, a phase shift portion (13) disposed in a region near each of the line patterns and shifting the phase of passing light, and standard patterns (11a-11d) for obtaining images as a standard used in measurement of line pattern image misalignment. Intervals of the line patterns are set such that each line pattern can be considered equivalent to an isolated line. |
