TRANSPARENT ELECTRODE FOR SEMICONDUCTOR LIGHT-EMITTING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a transparent electrode for a gallium nitride-based compound semiconductor light-emitting device in which ohmic contact and current diffusion are good and the bonding strength of a bonding pad is large.

SOLUTION: The transparent electrode for the gallium nitride-based compound semiconductor light-emitting device comprises: a contact metal layer formed on a p-type semiconductor layer by the ohmic contact; a current diffusion layer which is formed on the contact metal layer and has a lower resistance value per unit distance on an electrode plane than a contact metal; and the bonding pad formed on the current diffusion layer.

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