发明名称 DEPOSITED FILM FORMING DEVICE BY PLASMA CVD METHOD
摘要 PURPOSE:To form a deposited film which is stable in electrical, optical and photoconductive characteristics and has uniform quality by providing a means for generating a magnetic field to the outside circumference of a reaction vessel and acting the magnetic field generated by the same to the excitation plasma in the vessel. CONSTITUTION:A gaseous raw material is introduced via a supply pipe 8 into a reaction chamber A. A microwave power source 6 is enegized to radiate microwaves via a dielectric window 4 and to excite the gaseous raw materials so that active species are formed. A coaxial magnetic field generating coil 13 provided to the outside circumference of the vessel is energized to act the force of the magnetic field by the magnetic lines D of force to the electric charge particles moving toward a perforated inside wall 3. The magnetic lines D of force are confined around a substrate 10 under rotation in the state shown by (c). More specifically, the microwave-excited plasma is generated in the atmosphere around the base body 10 shown by (c). Accordingly, the gaseous raw materials are formed as the stable particles, by which the utilizing efficiency thereof is improved and the deposited film having a uniform film thickness and uniform quality is formed.
申请公布号 JPS6230880(A) 申请公布日期 1987.02.09
申请号 JP19850168570 申请日期 1985.08.01
申请人 CANON INC 发明人 FUJIYAMA YASUTOMO
分类号 C23C16/50;C23C16/511;G03G5/08;G03G5/082 主分类号 C23C16/50
代理机构 代理人
主权项
地址