发明名称 |
Capacitor structure in trench structures of semiconductor devices and semiconductor devices comprising capacitor structures of this type and methods for fabricating the same |
摘要 |
A capacitor structure includes: a number of conductive regions of metallic and/or semiconducting materials and/or conductive metal compounds thereof, the conductive regions being arranged as stacked layers in a trench structure of a semiconductor device; and a dielectric surrounding the conductive regions.
|
申请公布号 |
US2006054959(A1) |
申请公布日期 |
2006.03.16 |
申请号 |
US20050223210 |
申请日期 |
2005.09.12 |
申请人 |
MAUDER ANTON;SCHULZE HANS-JOACHIM;STRACK HELMUT |
发明人 |
MAUDER ANTON;SCHULZE HANS-JOACHIM;STRACK HELMUT |
分类号 |
H01L29/94 |
主分类号 |
H01L29/94 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|