发明名称 Capacitor structure in trench structures of semiconductor devices and semiconductor devices comprising capacitor structures of this type and methods for fabricating the same
摘要 A capacitor structure includes: a number of conductive regions of metallic and/or semiconducting materials and/or conductive metal compounds thereof, the conductive regions being arranged as stacked layers in a trench structure of a semiconductor device; and a dielectric surrounding the conductive regions.
申请公布号 US2006054959(A1) 申请公布日期 2006.03.16
申请号 US20050223210 申请日期 2005.09.12
申请人 MAUDER ANTON;SCHULZE HANS-JOACHIM;STRACK HELMUT 发明人 MAUDER ANTON;SCHULZE HANS-JOACHIM;STRACK HELMUT
分类号 H01L29/94 主分类号 H01L29/94
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