发明名称 |
Low k ILD layer with a hydrophilic portion |
摘要 |
Embodiments of the invention provide a relatively hydrophilic layer in a low k dielectric layer. The hydrophilic layer may be formed by exposing the dielectric layer to light having enough energy to break Si-C and C-C bonds but not enough to break Si-O bonds.
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申请公布号 |
US2006057838(A1) |
申请公布日期 |
2006.03.16 |
申请号 |
US20040944358 |
申请日期 |
2004.09.16 |
申请人 |
JOHNSTON STEVEN W;BAXTER NATE |
发明人 |
JOHNSTON STEVEN W.;BAXTER NATE |
分类号 |
H01L21/4763 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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