发明名称 |
Semiconductor device having a junction extended by a selective epitaxial growth (SEG) layer and method of fabricating the same |
摘要 |
In a semiconductor device, and a method of fabricating the same, the semiconductor device includes a protrusion extending from a substrate and a selective epitaxial growth (SEG) layer surrounding an upper portion of the protrusion, the SEG layer exposing sidewalls of a channel region of the protrusion.
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申请公布号 |
US2006054969(A1) |
申请公布日期 |
2006.03.16 |
申请号 |
US20050099603 |
申请日期 |
2005.04.06 |
申请人 |
JANG SE-MYEONG;YANG WOUN-SUCK;YOON JAE-MAN;SUNG HYUN-JU |
发明人 |
JANG SE-MYEONG;YANG WOUN-SUCK;YOON JAE-MAN;SUNG HYUN-JU |
分类号 |
H01L29/76;H01L21/20 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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