发明名称 TREATING METHOD AND CARRIER USED THEREFOR
摘要 PURPOSE:To omit hot etching treatment and to improve productivity, by performing sputtering under the state a mask and holders are fixed to a carrier with a holder. CONSTITUTION:A carrier 1 is composed of the following parts: a disk shaped substrate 2; a plurality of guides 3, which are arranged and fixed on the main surface of the substrate in a ring shape; and holders 5, which are inserted in inserting grooves 4 that are provided at the specified end parts of said guides 3 so that the guides can be freely inserted and removed. A reference surface 9, which is extended in a straight line in correspondence with an orientation flat 8 of the carrier 1, is provided at the inner surface part of the guide 3 for positioning of a wafer 7. A mask 10 is overlapped on the main surface of the wafer 7, which is to be treated. Through hole parts having a desired pattern are provided in the mask 10. The outer diameter and the shape of the mask are the same as those of the wafer 7. The mask 10 is overlapped on the main surface of the wafer 7, which is the material to be treated. Thereafter sputtering is performed.
申请公布号 JPS63107121(A) 申请公布日期 1988.05.12
申请号 JP19860251681 申请日期 1986.10.24
申请人 HITACHI LTD 发明人 SHIMADA KAZUYOSHI
分类号 H01L21/31;H01L21/673;H01L21/68 主分类号 H01L21/31
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