| 摘要 |
PURPOSE:To secure a sufficient element separation withstand voltage without enlarging an occupying area, and obtain a semiconductor device having a groove-type element separation or capacitor of high reliability, by a method wherein a burried layer is formed by an epitaxial growth technique, and then a groove is formed in the manner in which at least a bottom surface is brought into contact with the burried layer. CONSTITUTION:When a semiconductor device which has a groove-type element separation region or groove-type capacitor region on a semiconductor substrate is manufacture, an impurity burried layer 14 of the same conductivity type as the substrate 11 and an impurity burried layer 16 of inverse conductivity type are formed, by introducing impurity into the semiconductor substrate 11, and a semiconductor film 17 of the same conductivity type as the substrate 11 or of inverse type is formed by epitaxial growth. Then a groove 21 is formed in the element separation region or the capacitor region in the manner in which at least the bottom of the groove 21 is brought into contact with at least one part of the above mentioned burried layer 14. For example, an insulative film 23 for element separation is burried into the bottom of the above groove 21. On the sidewall of the groove 21 a capacitor electrode 26 is formed via a capacitor insulative film 25, and a DRAMFC cell is manufactured. |
