发明名称 Method of forming CNT containing wiring material and sputtering target material used for the method
摘要 A method of forming a CNT containing wiring material is conducted by sputtering simultaneously CNT and a metal material on a surface of a substrate to form a CNT containing metal layer, then pattern-etching the CNT containing metal layer to form a wiring pattern. A sputtering target material having a metal material and CNT is used in the method.
申请公布号 US2006057742(A1) 申请公布日期 2006.03.16
申请号 US20050076024 申请日期 2005.03.10
申请人 HITACHI CABLE, LTD. 发明人 MANO SATORU;SAKAGUCHI HARUNORI
分类号 H01L21/00 主分类号 H01L21/00
代理机构 代理人
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