SOLID STATE IMAGING DEVICE, ITS MANUFACTURING DEVICE, AND DIGITAL CAMERA

摘要

PROBLEM TO BE SOLVED: To suppress the generation of a crack in a surface protective film in a solid state imaging device having the surface protective film on a semiconductor substrate on which a light receiving section is formed to generate charge by light incident thereto.

SOLUTION: An n-type storage region 106 constituting a light receiving section is formed in the p-type well region 104 of a semiconductor substrate. On the semiconductor substrate, a silicon nitride film 102 functioning as a surface protective film is formed through an interlayer insulating film 105b. The silicon nitride film 102 has regions of different film thicknesses.

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