发明名称 SURFACE ACOUSTIC WAVE DEVICE HAVING HIGH WITHSTANDING-POWER AND MANUFACTURING METHOD THEREOF
摘要 A surface acoustic wave device (11) includes a piezoelectric substrate (12) and an electrode section (17,18), disposed on the piezoelectric substrate, having a thin-film structure. The electrode section includes interdigital electrodes and junction electrodes (13,14) connected to the interdigital electrodes. The interdigital electrodes each include corresponding first base layers containing Ta and Cu layers or Cu-M alloy layers each disposed on the corresponding first base layers, wherein M represents one or more elements selected from the group consisting of Ag, Sn, and C.
申请公布号 KR100559091(B1) 申请公布日期 2006.03.15
申请号 KR20030075547 申请日期 2003.10.28
申请人 发明人
分类号 H03H9/145;H03H3/08;H03H9/02;H03H9/25 主分类号 H03H9/145
代理机构 代理人
主权项
地址