| 摘要 |
The thin film forming device (1) of the invention comprises a gas introducing means for introducing a reactive gas into a vacuum vessel (11), and a plasma generating means (61) for generating reactive gas plasma in the vacuum vessel (11). The plasma generating means (61) comprises a dielectric wall (63) and spiral antennas (65a, 65b). The antennas (65a, 65b) are connected in parallel with a high frequency power source (69) and are disposed adjacent each other in a direction normal to a line normal to the spiral-forming plane of the antennas (65a, 65b).
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