发明名称 |
THIN FILM TRANSISTOR SUBSTRATE OF HORIZONTAL ELECTRONIC FIELD APPLYING TYPE AND FABRICATING METHOD THEREOF |
摘要 |
A thin film transistor substrate of horizontal electric field type includes: a gate line and a first common line formed on a substrate to be in parallel to each other; a data line crossing the gate line and the first common line with a gate insulating film therebetween to define a pixel area; a second common line crossing the first common line having the gate insulating film therebetween; a thin film transistor connected to the gate line and the data line; a common electrode extending from the second common line in said pixel area; a pixel electrode that is parallel to the common electrode and the second common line; a protective film for covering the thin film transistor; a gate pad having a lower gate pad electrode connected to an upper gate pad electrode through a first contact hole; a common pad having a lower common pad electrode connected to an upper common pad electrode through a second contact hole; and a data pad having a lower data pad electrode connected to an upper data pad electrode provided within a third contact hole. |
申请公布号 |
KR100560402(B1) |
申请公布日期 |
2006.03.14 |
申请号 |
KR20030077659 |
申请日期 |
2003.11.04 |
申请人 |
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发明人 |
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分类号 |
G02F1/1343;G02F1/133;G02F1/136;G02F1/1362;G02F1/1368;G03F7/20;H01L21/00;H01L21/77;H01L21/84;H01L27/12;H01L29/786;H01L31/20 |
主分类号 |
G02F1/1343 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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