| 摘要 |
PROBLEM TO BE SOLVED: To suppress the dispersion of the concentration of an impurity injected in a semiconductor layer even when the thickness of the semiconductor layer formed on an insulating layer is dispersed. SOLUTION: A method of manufacturing a semiconductor device includes the steps of depositing an ion passing film 4 on the semiconductor layer 3, distributing the impurity in the semiconductor layer 3 so that the peak P1 of the total of the impurity concentration is flattened over the entirety of the depth direction of the semiconductor layer 3 by performing the ion injections IP1-IP4 of the impurity in the semiconductor layer 3 by the different energy through the ion passing film 4, and averaging the concentration of the impurity injected in the semiconductor layer 3. COPYRIGHT: (C)2006,JPO&NCIPI
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