SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device with high thermal resistance. SOLUTION: The semiconductor device 10 is provided with a semiconductor chip 14 having through holes 12 having opening ends on a main surface 20 and a rear face 24 confronted with the main surface. A sintered body 34 formed by sintering metal nanoparticles having particle diameters sintered at about 400°C or below is given in the through holes 12. COPYRIGHT: (C)2006,JPO&NCIPI