发明名称 |
Method and system for etching a film stack |
摘要 |
A method and system is described for preparing a film stack, and forming a feature in the film stack using a plurality of dry etching processes. The feature formed in the film stack can include a gate structure having a critical dimension of approximately 25 nm or less. This critical dimension can be formed in the polysilicon layer using four mask layers.
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申请公布号 |
US2006051964(A1) |
申请公布日期 |
2006.03.09 |
申请号 |
US20040926403 |
申请日期 |
2004.08.26 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
XIA ANNIE;MOCHIKI HIROMASA;MAHOROWALA ARPAN P. |
分类号 |
H01L21/461;H01L21/302 |
主分类号 |
H01L21/461 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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